Millimeter-Wave Substrate Integrated Waveguide Using Micromachined Tungsten-Coated Through Glass Silicon Via Structures

Millimeter-Wave Substrate Integrated Waveguide Using Micromachined Tungsten-Coated Through Glass Silicon Via Structures

Citation

Hyeon, I.-J.; Baek, C.-W. Millimeter-Wave Substrate Integrated Waveguide Using Micromachined Tungsten-Coated Through Glass Silicon Via Structures. Micromachines 2018, 9, 172.
Please note that this citation format may need to be adapted depending on the specific style guide required by your publication or institution.

Keywords

  • Substrate integrated waveguide (SIW)
  • Through glass silicon via (TGSV)
  • Glass interposer
  • Through glass via (TGV)
  • Millimeter-wave
  • Micromachining
  • Tungsten coating
  • Insertion loss 

Brief

This article presents a novel method to fabricate a millimeter-wave substrate integrated waveguide (SIW) on a glass substrate using micromachined tungsten-coated through glass silicon vias (TGSVs) for improved performance and integration capabilities. 

Summary

This article presents a novel method for fabricating millimeter-wave substrate integrated waveguides (SIWs) using micromachined tungsten-coated through glass silicon via (TGSV) structures.

Here are some key aspects of the research:

  • Motivation: The authors aim to address the limitations of existing SIW fabrication techniques, which are not easily integrated with semiconductor processes and can have high costs. Glass interposers, with their low loss and cost-effectiveness, are presented as a promising alternative.
  • Proposed Solution: The researchers propose a technique that combines deep reactive ion etching (DRIE) of silicon vias, selective tungsten coating, and glass reflow to create TGSVs embedded in a glass substrate. This approach eliminates the need for separate glass drilling and metallization steps.
  • Advantages: Tungsten-coated TGSVs are shown to be an effective replacement for conventional metallic vias, offering comparable performance without compromising insertion loss. The fabrication process is compatible with semiconductor manufacturing, enabling integration with silicon-based circuits and elements.
  • Experimental Validation: A Ka-band SIW prototype fabricated using the proposed method exhibited an average insertion loss of 0.69 ± 0.18 dB and a return loss better than 10 dB in the 20 GHz to 45 GHz frequency range, comparable to other reported millimeter-wave SIWs.
  • Potential Applications: The developed technique has potential applications in various millimeter-wave devices, including inductors, filters, and antennas, requiring a glass substrate with conductive vias. 

Origin: https://www.semanticscholar.org/reader/e18086d1a9eace2ab48e82885af8a8c839ad17f5

返回博客