Demonstration of Embedded Cu Trench RDL using Panel Scale Lithography and Photosensitive Dry Film Polymer Dielectrics
Citation
Sundaram, V., Liu, F., Nair, C., Tummala, R., Kubo, A., Ando, T., Best, K., & Shay, C. (2017). Demonstration of Embedded Cu Trench RDL using Panel Scale Lithography and Photosensitive Dry Film Polymer Dielectrics. International Symposium on Microelectronics.
Keywords
- RDL (Redistribution Layer)
- 2.5D Interposer
- Glass Interposer
- Embedded Trench RD
- Photo-sensitive Dry Film Dielectric
- Panel Scale Lithography
- High-Density I/O
Brief
This article presents a new method for building high-density, low-resistance interconnections on glass interposers using a new photo-sensitive dry film dielectric material and a panel scale lithography tool.
Summary
This article from the International Symposium on Microelectronics in 2017, authored by Venky Sundaram et al., focuses on a novel approach to building high-density, efficient, and cost-effective interconnections in electronic packages, specifically for 2.5D interposers. Here are the key takeaways from the article:
- Demand for Higher Bandwidth: The increasing demand for computing power, driven by applications like AI and autonomous driving, requires higher bandwidth connections between logic and memory in electronic systems. While traditional approaches relied on shrinking transistors, packaging technologies like 2.5D interposers are becoming crucial for further performance gains.
- Limitations of Existing Solutions: Traditional silicon-based interposers face limitations due to high cost and the electrical properties of silicon. Organic interposers, while cheaper, struggle with dimensional stability and reliability issues.
- Glass Interposers as a Solution: The article presents glass as a promising alternative for interposer material. Glass offers silicon-like electrical performance at potentially lower cost and better scalability.
- Novel Fabrication Process: The researchers demonstrate a new method for creating high-density interconnections on glass substrates. This involves using a new photo-sensitive dry film polymer dielectric and a large-area panel-scale lithography tool. This allows for creating very fine copper lines (down to 2μm) embedded within the dielectric, achieving densities greater than traditional methods.
- Key Material and Tool: The article describes the properties and advantages of the new dielectric material (TOK IF series). It also highlights the capabilities of the Rudolph Technologies JetStep® G45 HR lithography system, particularly its high resolution and large depth of focus, crucial for this application.
- Successful Demonstration: The article reports the successful fabrication of 2μm wide embedded copper traces on glass substrates, showcasing the potential of this approach for high-density interconnections in future electronic packages.
In essence, the article presents a significant advancement in 2.5D interposer technology by combining a novel fabrication process with promising materials to achieve fine-pitch, high-density interconnections on glass substrates. This has the potential to address the growing bandwidth requirements of future high-performance computing systems.
Origin: https://meridian.allenpress.com/ism/article/2017/1/000689/35592/Demonstration-of-Embedded-Cu-Trench-RDL-using