3D IPD on Thru Glass Via Substrate using panel Manufacturing Technology

3D IPD on Thru Glass Via Substrate using panel Manufacturing Technology

Citation

Takano, T., Kuramochi, S., & Yun, H. (2017). 3D IPD on Thru Glass Via Substrate using panel Manufacturing Technology. International Symposium on Microelectronics, 1.

Keywords

  • 3D IPD
  • TGV
  • MIM Capacitor
  • Silicon Nitride
  • Capacitance Density
  • 3D Inductor
  • Q-Factor
  • Glass Substrate
  • RF Front-End Filters
  • Conformal Cu Plating

Brief

This article presents a demonstration of 3D RF front-end filters using a 3D solenoid inductor and capacitor with Through Glass Vias (TGV) on a Gen1 glass substrate.

Summary

This 2017 research paper by Takamasa Takano, Satoru Kuramochi, and Hobie Yun, presented at the International Symposium on Microelectronics, explores the use of Through Glass Via (TGV) technology for 3D RF front-end filters.

Here are the key takeaways:

  • The Challenge: As electronic devices become smaller and more complex, there's a growing need to integrate high-density, high-performance components, particularly in RF front-end modules.
  • The Solution: The researchers propose using TGV technology on glass substrates to create 3D integrated passive devices (IPDs), specifically inductors and capacitors.
  • Why Glass? Glass offers numerous advantages as a substrate material, including:
  1. Low Electrical Loss: This property is crucial for achieving high-quality factors (Q-factors) in RF components like inductors, leading to better performance.
  2. Large Panel Manufacturing: Glass can be manufactured in large panels, enabling cost-effective mass production.
  • TGV Technology: TGV involves creating conductive vias (holes) through the glass substrate. These vias provide electrical connections for building 3D structures of inductors and capacitors.
  • Key Achievements: The researchers successfully demonstrated:
  1. High-Q Inductors: Using TGV and a conformal copper plating method, they achieved a low resistance of 2.7 milliohms per via and a peak Q-factor of 39 at 2.5 GHz.
  2. High-Density Capacitors: They integrated copper metal-insulator-metal (MIM) capacitors, achieving a capacitance density of 0.26 nF/mm².
  • Manufacturing: The entire process was implemented using industry-standard glass panel manufacturing equipment, ensuring scalability and cost-effectiveness.
  • Reliability: The fabricated TGV filters underwent rigorous testing (thermal cycling, drop shock, bending, high-power) and showed no performance degradation, highlighting the robustness of the technology.

In essence, the sources present a promising approach to creating high-performance, miniaturized RF front-end filters using TGV technology on glass substrates. The research highlights the potential of this technology for next-generation electronics.

Origin: https://meridian.allenpress.com/ism/article/2017/1/000097/35775/3D-IPD-on-Thru-Glass-Via-Substrate-using-panel

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