Through-Glass-Via Enabling Low Loss High-Linearity RF Components
Citation
Liljeholm, J., Shah, U., Campion, J., Ebefors, T., Oberhammer, J. (2016) Through-Glass-Via Enabling Low Loss High-Linearity RF Components. In: N.B. When citing this work, cite the original published paper.
The source also provides a permanent link to the given excerpt: http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-199961
Keywords
- MEMS Manufacturing
- Wafer-Level Packaging (WLP)
- Through Glass Vias (TGVs)
- RF TGVs
- Low Loss
- High-Linearity
- Glass Substrate
- DC Resistance
- Non-Linearity
Brief
This paper describes the successful fabrication and testing of low-loss, high-linearity metal Through-Glass-Vias (TGVs) for use in wafer-level 3D packages.
Summary
This article presents a novel method for fabricating low-loss, high-linearity RF components using Through-Glass-Via (TGV) technology for wafer-level 3D packaging. The process was carried out on Eagle glass substrates chosen for their excellent electrical insulation properties due to the absence of heavy metals. The fabrication process involved etching TGVs into the glass substrate, followed by the deposition of a conformal gold layer for the redistribution layer (RDL) and TGV plating. A glass cap wafer was then bonded to the substrate, and a thinning and reveal process was performed to access the TGVs from the front side.
Here are the key results from the study:
- Successful Fabrication: The study demonstrated a successful fabrication process for fully functional TGV wafer-level 3D packages.
- Low Resistance: DC measurements showed a via resistance of 28mOhm per TGV, including the RDL and bond interfaces.
- High Linearity: RF characterization revealed excellent linearity, with two sets of TGVs on a 1.1 mm transmission line achieving a non-linearity (IP3) better than 78 dBm. This indicates that the TGVs have minimal impact on the signal distortion and maintain signal integrity.
Origin: http://kth.diva-portal.org/smash/get/diva2:1067132/FULLTEXT01.pdf